10v drive nch mosfet R6015ANZ ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low input capacitance. 3) high esd. ? application switching ? packaging specifications ? inner circuit package bulk code - basic ordering unit (pieces) 360 R6015ANZ ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v continuous i d ? 15 a pulsed i dp ? 60 a continuous i s 15 a pulsed i sp 60 a avalanche current i as 7.5 a avalanche energy e as 15 mj power dissipation p d 110 w channel temperature t ch 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25c *3 limited only by maximum channel temperature allowed. *4 t c =25c ? thermal resistance symbol limits unit channel to case rth (ch-c) 1.13 ? c / w * t c =25c parameter type source current (body diode) drain current parameter *1 *1 (1) gate (2) drain (3) source ? 1 body diode *2 *2 *3 *4 *3 * 15.5 3.6 5.5 3.0 2.0 3.0 0.9 5.45 5.45 0.75 2.0 4.5 2.0 14.5 16.5 26.5 2.5 14.8 0.44 16.5 3.5 10.0 to-3pf (1) (2) (3) (1) (3) (2) ?1 (1) gate (2) drain (3) source 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R6015ANZ ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 2.95 - 4.15 v v ds =10v, i d =1ma forward transfer admittance l y fs l 4.5 - - s v ds =10v, i d =7.5a input capacitance c iss - 1700 - pf v ds =25v output capacitance c oss - 1120 - pf v gs =0v reverse transfer capacitance c rss - 80 - pf f=1mhz turn-on delay time t d(on) - 50 - ns v dd 300v, i d =7.5a rise time t r - 50 - ns v gs =10v turn-off delay time t d(off) - 150 - ns r l =40 ? fall time t f - 60 - ns r g =10 ? total gate charge q g - 50 - nc v dd 300v gate-source charge q gs -8-nci d =15a gate-drain charge q gd - 20 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =15a, v gs =0v * ?? 0.23 0.3 parameter conditions conditions ? parameter static drain-source on-state resistance r ds (on) i d =7.5a, v gs =10v - * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6015ANZ ? electrical characteristic curves 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : p w (s) fig.1 normalized transient thermal resistance v.s. pulse width ta=25 single pulse tester : tmr - 850 rth(ch - a)=28.6 /w rth(ch - a)(t)=r(t) rth(ch - a) 0 10 20 30 40 0 10 20 30 40 50 v gs = 4.5v v gs = 5.0v v gs = 5.5v v gs = 6.0v v gs = 6.5v v gs = 8.0v v gs = 7.0v v gs = 10.0v ta=25 pulsed fig.2: typical output characteristics( ) drain - source voltage: v ds (v) drain current: i d (a) 0 5 10 15 20 0 1 2 3 4 5 v gs = 4.5v v gs = 5.0v v gs = 5.5v v gs = 6.0v v gs = 6.5v v gs = 10.0v v gs = 8.0v v gs = 7.0v ta=25 pulsed fig.3: typical output characteristics( ) drain - source voltage: v ds (v) drain current: i d (a) 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 v ds = 10v pulsed ta=125 t a = 75 t a = 25 ta= - 25 fig.4 typical transfer characteristics gate - source voltage : v gs (v) drain current : i d (a) fig.5 gate threshold voltage vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma channel temperature: t ch ( c) gate threshold voltage: v gs(th) (v) 0.01 0.1 1 10 0.001 0.1 10 v gs = 10v pulsed ta=125 t a = 75 t a = 25 ta= - 25 fig.6 static drain - source on - state resistance vs. drain current drain current : i d (a) static drain - source on - state resistance : r ds(on) ( ) 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 i d =7.5a i d =15a ta=25 pulsed fig.7 static drain - source on - state resistance vs. gate source voltage gate - source voltage : v gs (v) static drain - source on - state resistance : r ds(on) ( ) fig.8 static drain - source on - state resistance vs. channel temperature 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 v gs = 10v pulsed i d = 7.5a i d = 15a channel temperature: t ch ( c) static drain - source on - state resistance : r ds(on) ( ) 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v ds = 10v pulsed ta=125 t a = 75 t a = 25 ta= - 25 fig.9 forward transfer admittance vs. drain current drain current : i d (a) forward transfer admittance : |yfs| (s) 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6015ANZ 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs = 0v pulsed ta=125 t a = 75 t a = 25 ta= - 25 fig.10 source current vs. sourse - drain voltage source - drain voltage : v sd (v) source current : i s (a) 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c iss c oss c rss ta= 25 f= 1mhz v gs = 0v fig.11 typical capacitance vs. drain - source voltage drain - source voltage : v ds (v) capacitance : c (pf) 0 5 10 15 0 10 20 30 40 50 60 70 ta= 25 v dd = 300v i d = 15a r g = 10 pulsed fig.12 dynamic input characteristics total gate charge : q g (nc) gate - source voltage : v gs (v) 10 100 1000 0.1 1 10 100 ta= 25 di / dt= 100a / s v gs = 0v pulsed fig.13 reverse recovery time vs.source current source current : i s (a) reverse recovery time: t rr (ns) 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25 v dd = 300v v gs = 10v r g = 10 pulsed fig.14 switching characteristics drain current : i d (a) switching time : t (ns) 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6015ANZ ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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